Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
نویسندگان
چکیده
http://dx.doi.org/10.1016/j.sse.2016.07.009 0038-1101/ 2016 Elsevier Ltd. All rights reserved. ⇑ Corresponding author at: Infineon Technologies Austria AG, Siemensstraße 2, A-9500 Villach, Austria. E-mail address: [email protected] (M. Capriotti). M. Capriotti a,⇑, E. Bahat Treidel , C. Fleury , O. Bethge , C. Ostermaier , M. Rigato , S.L.C. Lancaster , F. Brunner , H. Detz , O. Hilt , J. Würfl , D. Pogany , G. Strasser a
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